Перегляд за автором "Kravchenko, V.M."

Сортувати за: Порядок: Результатів:

  • Makara, V.A.; Steblenko, L.P.; Kuryliuk, A.M.; Naumenko, S.M.; Kolchenko, Iu.L.; Kravchenko, V.M. (Functional Materials, 2007)
    Microhardness variations in germanium crystals caused by a weak constant magnetic field have been studied. It is fount that the magnetomechanical effect, that is relative change in microhardness, becomes relaxed in time. ...
  • Vakulenko, O.V.; Kravchenko, V.M. (Functional Materials, 2004)
    The work is aimed at the nature elucidation of IR photoluminescence (PL) bands with peaks at 1.3 and 1.6 eV (970 and 790 nm, respectively) in ZnSe and ZnSe(Te) crystals. Experimental studies of the PL of additionally ...
  • Korotchenkov, O.O.; Steblenko, L.P.; Podolyan, A.O.; Kalinichenko, D.V.; Tesel’ko, P.O.; Kravchenko, V.M.; Tkach, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical ...
  • Makara, V.A.; Steblenko, L.P.; Kuryliuk, A.M.; Kobzar, Iu.L.; Naumenko, S.M.; Krit, A.M.; Kravchenko, V.M. (Functional Materials, 2009)
    The experimental magnetic treatment conditions of silicon crystals in a weak (B = 0.17 T) magnetic field which provide a long-term stability of magnetomechanical effect (MME) have been investigated. It is established that ...